PART |
Description |
Maker |
M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYMD512M646CLFP8-D43 HYMD512M646CLFP8-J HYMD512M64 |
200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (FBGA) 128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
HYMD2166466 HYMD216646L6 HYMD2166466-H |
16Mx64|2.5V|K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
ADECB1608 |
DDR SDRAM 200pin DIMM
|
A-Data Technology
|
M464S1654BT1 |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung Electronic
|
MT18VDDF12872HY-335XX MT18VDDF12872HG-265 MT18VDDF |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA200 DDR SDRAM SODIMM
|
Micron Technology
|
HYMD532M646CLP6-D43 HYMD564M646CLP6-D43 HYMD532M64 |
200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (TSOP)
|
Hynix Semiconductor
|
WED3EG6417S202D4 WED3EG6417S265D4 WED3EG6417S262D4 |
128MB - 16Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
HYMD512M646BLF8-D43 HYMD512M646BLF8-H HYMD512M646B |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA)
|
Hynix Semiconductor
|
HYMP112S64M8-C4 HYMP564S646-E3 HYMP532S64P6-E3 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. 64M X 64 DDR DRAM MODULE, 0.6 ns, ZMA200
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
WED3EG6418S335D4 WED3EG6418S202D4 WED3EG6418S262D4 |
128MB- 16Mx64 DDR SDRAM UNBUFFERED W/PLL
|
WEDC[White Electronic Designs Corporation]
|
M470L3224FU0 M485L1624FU0-CB3 M470L1624FU0-CA2 M47 |
DDR SDRAM SODIMM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|